(China (Mainland))
Product Summary
The MRF223 is a Field Effect Transistor.
Parametrics
MRF223 absolute maximum ratings: (1)Drain–Gate Voltage: 65 Vdc; (2)Drain–Gate Voltage: 65 Vdc; (3)Gate–Source Voltage: ±40 Adc; (4)Drain Current Continuous: 4.0 Adc.
Features
MRF223 features: (1)Low Crss-4.5 pF @ VDS = 28 V; (2)MRF166C Typical Performance at 400 MHz, 28 Vdc; (3)Replacement for Industry Standards such as MRF136, DV2820, BLF244, SD1902, and ST1001; (4)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (5)Facilitates Manual Gain Control, ALC and Modulation Techniques; (6)Excellent Thermal Stability, Ideally Suited for Class A Operation; (7)Circuit board photomaster available upon request by; (8)contacting RF Tactical Marketing in Phoenix, AZ.
Diagrams
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Negotiable |
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MRF20030R |
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Negotiable |
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MRF20060 |
Other |
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Negotiable |
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MRF20060_1248487 |
Other |
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Data Sheet |
Negotiable |
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MRF20060R |
Other |
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Data Sheet |
Negotiable |
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MRF20060RS |
Other |
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Data Sheet |
Negotiable |
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