Product Summary

The MJ15025G is a silicon PNP power transistor. The applications of the MJ15025G include designed for high power audio, disk head positioners and other linear applications.

Parametrics

MJ15025G absolute maximum ratings: (1)VEBO Emitter-base voltage Open collector: -5V; (2)IC Collector current: -16A; (3)ICM Collector current-peak: -30A; (4)IB Base current: -5 A; (5)PD Total power dissipation TC=25: 250W; (6)Tj Junction temperature: 150℃; (7)Tstg Storage temperature: -65℃ to 200℃.

Features

MJ15025G features: (1) With TO-3 package; (2) Complement to type; (3) Excellent safe operating area; (4) High DC current gain hFE = 15 (Min) @ IC = 8Adc.

Diagrams

MJ15025G Dimmension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJ15025G
MJ15025G
ON Semiconductor
Transistors Bipolar (BJT) 16A 250V 250W PNP
Data Sheet
0-1: $2.44
1-25: $2.10
25-100: $1.72
100-500: $1.42
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJ15
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Data Sheet
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MJ15001
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Data Sheet
Negotiable 
MJ15002
MJ15002
ON Semiconductor
Transistors Bipolar (BJT) 15A 140V 200W PNP
Data Sheet
Negotiable 
MJ15002G
MJ15002G
ON Semiconductor
Transistors Bipolar (BJT) 15A 140V 200W PNP
Data Sheet
Negotiable 
MJ15003G
MJ15003G
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Data Sheet
0-1: $2.27
1-25: $1.85
25-100: $1.67
100-500: $1.50
MJ15011
MJ15011
ON Semiconductor
Transistors Bipolar (BJT) 10A 250V 200W NPN
Data Sheet
Negotiable