Product Summary

The MG100Q2YS51 is an N CHANNEL IGBT.

Parametrics

MG100Q2YS51 absolute maximum ratings: (1)Collector-Emitter Voltage VCES: 1200 V; (2)Gate-Emitter Voltage VGES: ±20 V; (3)Collector Current DC ic (25°C / 80°C): 150/100 A; (4)Forward Current DC If: 100 A; (5)Collector Power Dissipation (Tc = 25°C)PC: 660 W; (6)Junction Temperature Tj: 150 °C; (7)Storage Temperature Range Tstg: -40-125 °C.


Features

MG100Q2YS51 features: (1)High Input Impedance; (2)High Speed : tf=0.3/μs (Max.)@Inductive Load Low Saturation Voltage : VCE (gat)=3.6V (Max.); (3)Enhancement-Mode; (4)Includes a Complete Half Bridge in One Package; (5)The Electrodes are Isolated from Case.


Diagrams

MG100Q2YS51 pin connection

MG1000E
MG1000E

Other


Data Sheet

Negotiable 
MG1001
MG1001

Other


Data Sheet

Negotiable 
MG1001E
MG1001E

Other


Data Sheet

Negotiable 
MG1002E
MG1002E

Other


Data Sheet

Negotiable 
MG1004
MG1004

Other


Data Sheet

Negotiable 
MG1004E
MG1004E

Other


Data Sheet

Negotiable