(China (Mainland))
Product Summary
The MRF182 is an N-Channel Enhancement Mode MOSFET.
Parametrics
MRF182 absolute maximum ratings: (1)Drain–Source Voltage: VDSS: 65 Vdc; (2)Gate–Source Voltage: VGS: ±20 Vdc; (3)Total Device Dissipation: @ TC = 70°C:74W, Derate above 70°C: 0.57 W/°C; (4)Storage Temperature Range: Tstg: – 65 to +150 °C; (5)Operating Junction Temperature: TJ: 200 °C.
Features
MRF182 features: (1)High Gain, Rugged Device; (2)Broadband Performance from HF to 1 GHz; (3)Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF182S |
Other |
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Data Sheet |
Negotiable |
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MRF182SR1 |
Other |
|
Data Sheet |
Negotiable |
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MRF182R1 |
Other |
|
Data Sheet |
Negotiable |
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|
MRF182 |
Other |
|
Data Sheet |
Negotiable |
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