(China (Mainland))
Product Summary
The MRF240 is an NPN silicon RF Power Transistor. It is designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment.
Parametrics
MRF240 absolute maximum ratings: (1)Collector–Emitter Voltage: VCEO :16 Vdc; (2)Collector–Base Voltage: VCBO: 36 Vdc; (3)Emitter–Base Voltage: VEBO: 4.0 Vdc; (4)Collector Current — Continuous: IC: 8.0 Adc; (5)Total Device Dissipation: @ TC = 25°C: 100W, Derate above 25°C: 0.57W/°C; (6)Storage Temperature Range: Tstg: –65 to +150 °C.
Features
MRF240 features: (1)High Common Emitter Power Gain; (2)Specified 13.6 V, 160 MHz Performance: Output Power = 40 Watts, Power Gain = 9.0 dB Min, Efficiency = 55% Min; (3)Load Mismatch Capability at Rated Voltage and RF Drive; (4)Silicon Nitride Passivated; (5)Low Intermodulation Distortion, d3 = –30 dB Typ.
Diagrams
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 MRF240A |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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MRF240 |
Other |
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Data Sheet |
Negotiable |
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