Product Summary

Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH?
IGBTs, with outstanding performances.
The suffix “V” identifies a family optimized for high
frequency.

Parametrics

HIGH CURRENT CAPABILITY
HIGH FREQUENCY OPERATION UP TO
50 KHz
LOSSES INCLUDE DIODE RECOVERY
ENERGY
OFF LOSSES INCLUDE TAIL CURRENT
LOWER CRES / CIES RATIO
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION

Features

VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250μA
VCE(SAT) Collector-Emitter Saturation
Voltage
VGE= 15V, IC= 30A, Tj= 25°C
VGE= 15V, IC= 30A,
Tj= 125°C

Diagrams


STGW12NB60HD
STGW12NB60HD
Other

Data Sheet
Negotiable 
STGW19NC60W
STGW19NC60W
STMicroelectronics
IGBT Transistors 19A 600V ULT FS IGBT
Data Sheet
0-325: $1.51
325-500: $1.36
500-1000: $1.15
1000-2000: $1.09
STGW19NC60WD
STGW19NC60WD
STMicroelectronics
IGBT Transistors N Ch 600V 19A
Data Sheet
0-1: $1.62
1-10: $1.33
10-100: $1.16
100-250: $1.03
STGW20NB60H
STGW20NB60H
STMicroelectronics
IGBT Transistors N-Ch 600 Volt 12 Amp
Data Sheet
Negotiable 
STGW20NB60HD
STGW20NB60HD
STMicroelectronics
IGBT Transistors N-Ch 600 Volt 12 Amp
Data Sheet
Negotiable 
STGW20NB60K
STGW20NB60K
Other

Data Sheet
Negotiable