(China (Mainland))
Product Summary
The 2SK369-GR is a TOSHIBA Field Effect Transistor.
Parametrics
2SK369-GR absolute maximum ratings: (1)Gate-drain voltage VGDS: -40 V; (2)Gate current IG: 10 mA; (3)Drain power dissipation PD: 400 mW; (4)Junction temperature Tj: 125 ℃; (5)Storage temperature range Tstg: -55~125 ℃.
Features
2SK369-GR features: (1)Suitable for use as first stage for equalizer and MC head amplifiers.; (2)High |Yfs|: |Yfs| = 40 mS (typ.)(VDS = 10 V, VGS = 0, IDSS = 5 mA); (3)High breakdown voltage: VGDS = -40 V (min); (4)Super low noise: NF = 1.0dB (typ.)(VDS = 10 V, ID = 5 mA, f = 1 kHz, RG = 100 Ω); (5)High input impedance: IGSS = −1 nA (max)(VGS = -30 V).
Diagrams
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