(China (Mainland))
Product Summary
and switching characteristics as well as enhanced * High Input Impedance
avalanche ruggedness. These devices are well suited for * Built-in Fast Recovery Diode
Induction Heating ( I-H ) applications
Parametrics
Symbol Parameter Test Conditions Min. Typ. Max. Units
I = 15A -- 1.2 1.7 V
F
V Diode Forward Voltage
FM
I = 60A -- 1.8 2.1 V
F
t Diode Reverse Recovery Time I = 60A di/dt = 20 A/us IR Instantaneous Reverse Current VRRM = 1000V
Features
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.5 V @ IC
= 60A
High Input Impedance
Built-in Fast Recovery Diode
Diagrams
<IMG src="http://www.seekic.com/uploadfile/ic-mfg/2012722221012556.jpg" border=0>
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 FGL60N100BNTD |
Fairchild Semiconductor |
IGBT Transistors HIGH_POWER |
Data Sheet |
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FGL60N100BNTDTU |
Fairchild Semiconductor |
IGBT Transistors HIGH_POWER |
Data Sheet |
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