Product Summary

The K5L5628JT(B)M is a Multi Chip Package Memory which combines 256Mbit Synchronous Burst Multi Bank NOR Flash Memory
and 128Mbit Synchronous Burst UtRAM.
256Mbit Synchronous Burst Multi Bank NOR Flash Memory is organized as 16M x16 bits and 128Mbit Synchronous Burst UtRAM is
organized as 8M x16 bits.
In 256Mbit Synchronous Burst Multi Bank NOR Flash Memory, the memory architecture of the device is designed to divide its memory
arrays into 519 blocks with independent hardware protection. This block architecture provides highly flexible erase and program capa-
bility. The NOR Flash consists of sixteen banks. This device is capable of reading data from one bank while programming or erasing
in the other bank.
Regarding read access time, the device provides an 14.5ns burst access time and an 88.5ns initial access time at 54MHz. At 66MHz,
the device provides an 11ns burst access time and 70ns initial access time. The device performs a program operation in units of 16
bits (Word) and an erase operation in units of a block. Single or multiple blocks can be erased. The block erase operation is com-
pleted within typically 0.7 sec. The device requires 15mA as program/erase current.
In 128Mbit Synchronous Burst UtRAM, the device is fabricated by SAMSUNG′s advanced CMOS technology using one transistor

Parametrics

? Supports Driver Strength Optimization for system environment
power saving.
? Supports Asynchronous 4-Page Read and Asynchronous Write
Operation
? Supports Synchronous Burst Read and Synchronous Burst
Write Operation
? Synchronous Burst(Read/Write) Operation
- Supports 4 word / 8 word / 16 word and Full Page(256 word)
burst
- Supports Linear Burst type & Interleave Burst type
- Latency support : Latency 3 @ 52.9MHz(tCD 12ns)
- Supports Burst Read Suspend in No Clock toggling
- Supports Burst Write Data Masking by /UB & /LB pin control
- Supports WAIT pin function for indicating data availability.
? Max. Burst Clock Frequency : 52.9MHz

Features

? Operating Temperature : -30°C ~ 85°C
? Package : 115Ball FBGA Type - 8.0mm x 12.0mm
0.8mm ball pitch
1.4mm (Max.) Thickness
<NOR Flash>
? Single Voltage, 1.7V to 1.95V for Read and Write operations
? Organization
- 16,772,216 x 16 bit ( Word Mode Only)
? Read While Program/Erase Operation
? Multiple Bank Architecture
- 16 Banks (16Mb Partition)
? OTP Block : Extra 256Byte block
? Read Access Time (@ CL=30pF)
- Asynchronous Random Access Time :
90ns (54MHz) / 80ns (66MHz)
- Synchronous Random Access Time :
88.5ns (54MHz) / 70ns (66MHz)
- Burst Access Time :
14.5ns (54MHz) / 11ns (66MHz)
? Burst Length :
- Continuous Linear Burst
- Linear Burst : 8-word & 16-word with No-wrap & Wrap

Diagrams