(China (Mainland))
Product Summary
The MRF323 is an NPN silicon rf power transistor. It is designed for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
Parametrics
MRF323 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 33 Vdc; (2)Collector–Base Voltage VCBO: 60 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 2.2 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 55 Watts, Derate above 25℃: 310 W/℃; (6)Storage Temperature Range Tstg: – 65 to +150 ℃.
Features
MRF323 features: (1)Guaranteed Performance at 400 MHz, 28 V, Output Power = 20Watts, Power Gain = 10 dB Min, Efficiency = 50% Min; (2)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (3)Gold Metallization System for High Reliability; (4)Computer-controlled Wirebonding Gives Consistent Input Impedance.
Diagrams
| Image | Part No | Mfg | Description |  |
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 MRF323 |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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