Product Summary

The STFW3N150 is a Power MOSFET. It is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout.

Parametrics

STFW3N150 absolute maximum ratings: (1)Drain-source voltage (VGS = 0):1000V; (2)Gate-source voltage:± 30V; (3)Drain current (continuous) at TC = 25℃:2.5A; (4)Drain current (continuous) at TC = 100℃:1.57A; (5)Drain current (pulsed):10A; (6)Total dissipation at TC = 25℃:90W; (7)Derating factor:0.72W/℃; (8)Gate source ESD (HBM-C=100pF, R=1.5KΩ):3000V; (9)Peak diode recovery voltage slope:4.5V/ns; (10)Operating junction temperature:-55℃ to 150℃; (11)Storage temperature:-55℃ to 150℃.

Features

STFW3N150 features: (1)Extremely high dv/dt capability; (2)100% avalanche tested; (3)Gate charge minimized; (4)Very low intrinsic capacitances; (5)Very good manufacturing repeatability.

Diagrams

STFW3N150 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STFW3N150
STFW3N150
STMicroelectronics
MOSFET N-channel 1500 V 2.5 A PowerMESH
Data Sheet
0-1: $4.72
1-10: $4.25
10-100: $3.49
100-250: $3.22
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STFW3N150
STFW3N150
STMicroelectronics
MOSFET N-channel 1500 V 2.5 A PowerMESH
Data Sheet
0-1: $4.72
1-10: $4.25
10-100: $3.49
100-250: $3.22
STFW4N150
STFW4N150
STMicroelectronics
MOSFET N-channel 1500 V 4 A PowerMESH
Data Sheet
0-1: $4.96
1-10: $4.47
10-100: $3.67
100-250: $3.38
STFW60N65M5
STFW60N65M5
STMicroelectronics
MOSFET N-ch 650 V 0.049 Ohm 46 A MDmesh
Data Sheet
0-1: $8.32
1-10: $7.56
10-100: $6.43
100-250: $5.86
STFW69N65M5
STFW69N65M5
STMicroelectronics
MOSFET N-Ch 650V 0.037 Ohm 58A MDMesh V MOS
Data Sheet
0-1: $8.72
1-10: $7.93
10-100: $6.74
100-250: $6.15
STFW6N120K3
STFW6N120K3
STMicroelectronics
MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3
Data Sheet
0-1: $4.29
1-10: $3.86
10-25: $3.52
25-100: $3.17