Product Summary

The STGF19NC60KD IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off between switching performance and low on-state behavior. The applications of the STGF19NC60KD include High frequency motor controls, SMPS and PFC in both hard switch and resonant topologies, Motor drives.

Parametrics

STGF19NC60KD absolute maximum ratings: (1)Collector-emitter voltage (VGE = 0): 600 V; (2)Collector current (continuous) at TC = 25 ℃: 40 to 42 A; (3)Collector current (continuous) at TC = 100 ℃: 19 to 21 A; (4)Turn-off latching current: 40 A; (5)Pulsed collector current: 40 A; (6)Diode RMS forward current at TC = 25 ℃: 20 A; (7)Surge not repetitive forward current tp=10 ms sinusoidal: 50 A; (8)Gate-emitter voltage: ±20 V; (9)Total dissipation at TC = 25 ℃: 130 to 140 W; (10)Operating junction temperature: -55 to 150 ℃.

Features

STGF19NC60KD features: (1)Low on-voltage drop (VCE(sat)); (2)Low CRES / CIES ratio (no cross-conduction susceptibility); (3)Very soft ultra fast recovery anti-parallel diode.

Diagrams

STGF19NC60KD schematic diagram

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