(China (Mainland))
Product Summary
The MRF321 is a RF line NPN silicon RF power transistor. It is designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.
Parametrics
MRF321 absolute maximum ratings: (1)Collector-Emitter Voltage VCEO: 33 Vdc; (2)Collector-Base Voltage VCBO: 60 Vdc; (3)Emitter-Base Voltage VEBO: 4.0 Vdc; (4)Collector Current - Continuous, IC 1.1Adc; (5)Collector Current- Peak: 1.5Adc; (6)Total Device Dissipation, PD: 27Watts; (7)Storage Temperature Range Tstg: –65 to +150℃.
Features
MRF321 features: (1)Guaranteed Performance at 400 MHz, 28 Vdc; Output Power = 10 Watts; Power Gain = 12 dB Min; Efficiency = 50% Min; (2)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (3)Gold Metallization System for High Reliability; (4)Computer–Controlled Wirebonding Gives Consistent Input Impedance.
Diagrams
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 MRF321 |
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