(China (Mainland))
Product Summary
The IDT6167LA70DB is a 16,384-bit high-speed static RAM organized as 16K x 1. The part is fabricated using IDT’s highperformance, high reliability CMOS technology.
Parametrics
IDT6167LA70DB absolute maximum ratings: (1)Terminal Voltage with Respect: –0.5 to +7.0 V; (2)Operating Temperature: –55 to +125 °C; (3)TBIAS Temperature Under Bias: –65 to +135 °C; (4)Storage Temperature: –65 to +150 °C; (5)Power Dissipation: 1.0 W.
Features
IDT6167LA70DB features: (1)High-speed (equal access and cycle time); (2)Low power consumption; (3)Battery backup operation ?2V data retention voltage(IDT6167LA only); (4)Available in 20-pin CERDIP and Plastic DIP, and 20-pin SOJ; (5)Produced with advanced CMOS high-performance technology; (6)CMOS process virtually eliminates alpha particle softerror rates; (7)Separate data input and output; (8)Military product compliant to MIL-STD-883, Class B.
Diagrams
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 IDT60FCT299C |
Other |
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Data Sheet |
Negotiable |
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IDT6116LA15SOGI8 |
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IC SRAM 16KBIT 15NS 24SOIC |
Data Sheet |
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IDT6116SA20SOI8 |
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IC SRAM 16KBIT 20NS 24SOIC |
Data Sheet |
Negotiable |
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IDT6116SA20TP |
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IC SRAM 16KBIT 20NS 24DIP |
Data Sheet |
Negotiable |
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IDT6116SA20TPG |
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IC SRAM 16KBIT 20NS 24DIP |
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IDT6116SA20TPGI |
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IC SRAM 16KBIT 20NS 24DIP |
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